Technische Details TPH1R306PL,L1Q(M Toshiba
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 170W; SOP8A, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 100A, Power dissipation: 170W, Case: SOP8A, Gate-source voltage: ±20V, On-state resistance: 2.3mΩ, Mounting: SMD, Gate charge: 91nC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 5000 Stücke.
Weitere Produktangebote TPH1R306PL,L1Q(M
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TPH1R306PL,L1Q(M | Hersteller : TOSHIBA |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 100A; 170W; SOP8A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 170W Case: SOP8A Gate-source voltage: ±20V On-state resistance: 2.3mΩ Mounting: SMD Gate charge: 91nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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TPH1R306PL,L1Q(M | Hersteller : TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 170W; SOP8A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 170W Case: SOP8A Gate-source voltage: ±20V On-state resistance: 2.3mΩ Mounting: SMD Gate charge: 91nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |