![TPH11003NL,LQ TPH11003NL,LQ](https://www.mouser.com/images/toshibaamericaelectroniccomponentsinc/lrg/SOP_8_Advance_SPL.jpg)
auf Bestellung 2869 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 0.87 EUR |
10+ | 0.76 EUR |
100+ | 0.52 EUR |
500+ | 0.44 EUR |
1000+ | 0.43 EUR |
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Technische Details TPH11003NL,LQ Toshiba
Description: MOSFET N CH 30V 32A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Ta), Rds On (Max) @ Id, Vgs: 11mOhm @ 5.5A, 10V, Power Dissipation (Max): 1.6W (Ta), 21W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 100µA, Supplier Device Package: 8-SOP Advance (5x5), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V.
Weitere Produktangebote TPH11003NL,LQ nach Preis ab 0.53 EUR bis 1.23 EUR
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TPH11003NL,LQ | Hersteller : Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 5.5A, 10V Power Dissipation (Max): 1.6W (Ta), 21W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 100µA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V |
auf Bestellung 2298 Stücke: Lieferzeit 10-14 Tag (e) |
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TPH11003NL,LQ | Hersteller : Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 5.5A, 10V Power Dissipation (Max): 1.6W (Ta), 21W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 100µA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V |
Produkt ist nicht verfügbar |