Technische Details TPCA8011-H(TE12LQM Toshiba
Description: MOSFET N-CH 20V 40A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 4.5V, Power Dissipation (Max): 1.6W (Ta), 45W (Tc), Vgs(th) (Max) @ Id: 1.3V @ 200µA, Supplier Device Package: 8-SOP Advance (5x5), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 10 V.
Weitere Produktangebote TPCA8011-H(TE12LQM
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TPCA8011-H(TE12LQM | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 40A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 4.5V Power Dissipation (Max): 1.6W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 1.3V @ 200µA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 10 V |
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