![TPC8132,LQ(S TPC8132,LQ(S](https://static6.arrow.com/aropdfconversion/arrowimages/588d68bc3bd9145b0ded7bd00e5f33f0348e6068/sop-8.jpg)
auf Bestellung 4355 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
402+ | 0.38 EUR |
405+ | 0.37 EUR |
500+ | 0.3 EUR |
1000+ | 0.27 EUR |
2000+ | 0.26 EUR |
2500+ | 0.25 EUR |
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Produktbewertung abgeben
Technische Details TPC8132,LQ(S Toshiba
Description: MOSFET P-CH 40V 7A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), Rds On (Max) @ Id, Vgs: 25mOhm @ 3.5A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 2V @ 200µA, Supplier Device Package: 8-SOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -25V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 10 V.
Weitere Produktangebote TPC8132,LQ(S nach Preis ab 0.53 EUR bis 1.51 EUR
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TPC8132,LQ(S | Hersteller : Toshiba |
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auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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TPC8132,LQ(S | Hersteller : Toshiba |
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auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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TPC8132,LQ(S | Hersteller : Toshiba |
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auf Bestellung 346 Stücke: Lieferzeit 14-21 Tag (e) |
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TPC8132,LQ(S | Hersteller : Toshiba |
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Produkt ist nicht verfügbar |
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TPC8132,LQ(S | Hersteller : Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 3.5A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 200µA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -25V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 10 V |
Produkt ist nicht verfügbar |
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TPC8132,LQ(S | Hersteller : Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 3.5A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 200µA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -25V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 10 V |
Produkt ist nicht verfügbar |