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TP2640LG-G Microchip Technology
![TP2640-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20006372A.pdf](/images/adobe-acrobat.png)
Description: MOSFET P-CH 400V 86MA 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 86mA (Tj)
Rds On (Max) @ Id, Vgs: 15Ohm @ 300mA, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
auf Bestellung 297 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
5+ | 4.03 EUR |
25+ | 3.35 EUR |
100+ | 3.06 EUR |
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Technische Details TP2640LG-G Microchip Technology
Description: MOSFET P-CH 400V 86MA 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 86mA (Tj), Rds On (Max) @ Id, Vgs: 15Ohm @ 300mA, 10V, Power Dissipation (Max): 740mW (Ta), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 400 V, Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V.
Weitere Produktangebote TP2640LG-G nach Preis ab 3.1 EUR bis 4.08 EUR
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TP2640LG-G | Hersteller : Microchip Technology |
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auf Bestellung 3432 Stücke: Lieferzeit 10-14 Tag (e) |
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TP2640LG-G | Hersteller : Microchip Technology |
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TP2640LG-G | Hersteller : MICROCHIP TECHNOLOGY |
![]() Description: Transistor: P-MOSFET; unipolar; -400V; -0.7A; 740mW; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -400V Pulsed drain current: -0.7A Power dissipation: 0.74W Case: SO8 Gate-source voltage: ±20V On-state resistance: 15Ω Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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TP2640LG-G | Hersteller : Microchip Technology |
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Produkt ist nicht verfügbar |
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TP2640LG-G | Hersteller : Microchip Technology |
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Produkt ist nicht verfügbar |
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TP2640LG-G | Hersteller : Microchip Technology |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 86mA (Tj) Rds On (Max) @ Id, Vgs: 15Ohm @ 300mA, 10V Power Dissipation (Max): 740mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V |
Produkt ist nicht verfügbar |
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TP2640LG-G | Hersteller : MICROCHIP TECHNOLOGY |
![]() Description: Transistor: P-MOSFET; unipolar; -400V; -0.7A; 740mW; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -400V Pulsed drain current: -0.7A Power dissipation: 0.74W Case: SO8 Gate-source voltage: ±20V On-state resistance: 15Ω Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |