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TP2510N8-G Microchip Technology
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
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2000+ | 1.36 EUR |
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Technische Details TP2510N8-G Microchip Technology
Description: MOSFET P-CH 100V 480MA TO243AA, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 480mA (Tj), Rds On (Max) @ Id, Vgs: 3.5Ohm @ 750mA, 10V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 2.4V @ 1mA, Supplier Device Package: TO-243AA (SOT-89), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V.
Weitere Produktangebote TP2510N8-G nach Preis ab 1.07 EUR bis 5.51 EUR
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TP2510N8-G | Hersteller : Microchip Technology |
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auf Bestellung 50000 Stücke: Lieferzeit 14-21 Tag (e) |
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TP2510N8-G | Hersteller : Microchip Technology |
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auf Bestellung 50000 Stücke: Lieferzeit 14-21 Tag (e) |
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TP2510N8-G | Hersteller : Microchip Technology |
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auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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TP2510N8-G | Hersteller : Microchip Technology |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 480mA (Tj) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 750mA, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: TO-243AA (SOT-89) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V |
auf Bestellung 14000 Stücke: Lieferzeit 10-14 Tag (e) |
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TP2510N8-G | Hersteller : Microchip Technology |
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auf Bestellung 1045 Stücke: Lieferzeit 14-21 Tag (e) |
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TP2510N8-G | Hersteller : Microchip Technology |
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auf Bestellung 1045 Stücke: Lieferzeit 14-21 Tag (e) |
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TP2510N8-G | Hersteller : Microchip Technology |
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auf Bestellung 6800 Stücke: Lieferzeit 10-14 Tag (e) |
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TP2510N8-G | Hersteller : Microchip Technology |
![]() Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 480mA (Tj) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 750mA, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: TO-243AA (SOT-89) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V |
auf Bestellung 16649 Stücke: Lieferzeit 10-14 Tag (e) |
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TP2510N8-G | Hersteller : MICROCHIP TECHNOLOGY |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -1.5A; 1.6W; SOT89-3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Pulsed drain current: -1.5A Power dissipation: 1.6W Case: SOT89-3 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 13 Stücke: Lieferzeit 7-14 Tag (e) |
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TP2510N8-G | Hersteller : MICROCHIP TECHNOLOGY |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -1.5A; 1.6W; SOT89-3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Pulsed drain current: -1.5A Power dissipation: 1.6W Case: SOT89-3 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of channel: enhanced |
auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
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TP2510N8-G | Hersteller : Microchip Technology |
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auf Bestellung 50000 Stücke: Lieferzeit 14-21 Tag (e) |
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TP2510N8-G | Hersteller : Microchip |
![]() Anzahl je Verpackung: 10 Stücke |
auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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TP2510N8-G | Hersteller : Microchip Technology |
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