TP0620N3-G Microchip Technology
Hersteller: Microchip Technology
Description: MOSFET P-CH 200V 175MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 175mA (Tj)
Rds On (Max) @ Id, Vgs: 12Ohm @ 200mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Description: MOSFET P-CH 200V 175MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 175mA (Tj)
Rds On (Max) @ Id, Vgs: 12Ohm @ 200mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
auf Bestellung 1013 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
6+ | 3.06 EUR |
25+ | 2.53 EUR |
100+ | 2.32 EUR |
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Technische Details TP0620N3-G Microchip Technology
Description: MOSFET P-CH 200V 175MA TO92-3, Packaging: Bag, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 175mA (Tj), Rds On (Max) @ Id, Vgs: 12Ohm @ 200mA, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 2.4V @ 1mA, Supplier Device Package: TO-92-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V.
Weitere Produktangebote TP0620N3-G nach Preis ab 2.36 EUR bis 3.12 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||
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TP0620N3-G | Hersteller : Microchip Technology | MOSFET 200V 12Ohm |
auf Bestellung 486 Stücke: Lieferzeit 10-14 Tag (e) |
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TP0620N3-G | Hersteller : Microchip Technology | Trans MOSFET P-CH Si 200V 0.175A 3-Pin TO-92 Bag |
auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) |
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TP0620N3-G | Hersteller : Microchip Technology | Trans MOSFET P-CH Si 200V 0.175A 3-Pin TO-92 Bag |
auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) |
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TP0620N3-G | Hersteller : Microchip Technology | Trans MOSFET P-CH Si 200V 0.175A 3-Pin TO-92 Bag |
Produkt ist nicht verfügbar |
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TP0620N3-G | Hersteller : Microchip Technology | Trans MOSFET P-CH Si 200V 0.175A 3-Pin TO-92 Bag |
Produkt ist nicht verfügbar |
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TP0620N3-G | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -0.75A; 1W; TO92 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Pulsed drain current: -0.75A Power dissipation: 1W Case: TO92 Gate-source voltage: ±20V On-state resistance: 12Ω Mounting: THT Kind of package: bulk Kind of channel: enhanced Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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TP0620N3-G | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -0.75A; 1W; TO92 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Pulsed drain current: -0.75A Power dissipation: 1W Case: TO92 Gate-source voltage: ±20V On-state resistance: 12Ω Mounting: THT Kind of package: bulk Kind of channel: enhanced |
Produkt ist nicht verfügbar |