TN2435N8-G Microchip Technology
auf Bestellung 1508 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 84+ | 1.85 EUR |
| 85+ | 1.77 EUR |
| 93+ | 1.55 EUR |
| 100+ | 1.42 EUR |
| 250+ | 1.35 EUR |
| 500+ | 1.27 EUR |
| 1000+ | 1.21 EUR |
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Technische Details TN2435N8-G Microchip Technology
Description: MOSFET N-CH 350V 365MA TO243AA, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 365mA (Tj), Rds On (Max) @ Id, Vgs: 6Ohm @ 750mA, 10V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TO-243AA (SOT-89), Drive Voltage (Max Rds On, Min Rds On): 3V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 350 V, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V.
Weitere Produktangebote TN2435N8-G nach Preis ab 1.21 EUR bis 2.75 EUR
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TN2435N8-G | Hersteller : Microchip Technology |
 Trans MOSFET N-CH Si 350V 0.365A 4-Pin(3+Tab) SOT-89 T/R |
auf Bestellung 1508 Stücke: Lieferzeit 14-21 Tag (e) |
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TN2435N8-G | Hersteller : Microchip Technology |
Description: MOSFET N-CH 350V 365MA TO243AA Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 365mA (Tj) Rds On (Max) @ Id, Vgs: 6Ohm @ 750mA, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-243AA (SOT-89) Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 350 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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TN2435N8-G | Hersteller : Microchip Technology |
MOSFETs 350V 10Ohm |
auf Bestellung 7571 Stücke: Lieferzeit 10-14 Tag (e) |
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TN2435N8-G | Hersteller : Microchip Technology |
Trans MOSFET N-CH Si 350V 0.365A 4-Pin(3+Tab) SOT-89 T/R |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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TN2435N8-G | Hersteller : Microchip Technology |
Description: MOSFET N-CH 350V 365MA TO243AA Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 365mA (Tj) Rds On (Max) @ Id, Vgs: 6Ohm @ 750mA, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-243AA (SOT-89) Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 350 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V |
auf Bestellung 6758 Stücke: Lieferzeit 10-14 Tag (e) |
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TN2435N8-G | Hersteller : Microchip Technology |
Trans MOSFET N-CH Si 350V 0.365A 4-Pin(3+Tab) SOT-89 T/R |
Produkt ist nicht verfügbar |
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TN2435N8-G | Hersteller : Microchip Technology |
Trans MOSFET N-CH Si 350V 0.365A 4-Pin(3+Tab) SOT-89 T/R |
Produkt ist nicht verfügbar |
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TN2435N8-G | Hersteller : MICROCHIP TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 350V; 1A; 1.6W; SOT89-3 Kind of package: reel; tape Drain-source voltage: 350V On-state resistance: 6Ω Type of transistor: N-MOSFET Power dissipation: 1.6W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 1A Mounting: SMD Case: SOT89-3 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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TN2435N8-G | Hersteller : MICROCHIP TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 350V; 1A; 1.6W; SOT89-3 Kind of package: reel; tape Drain-source voltage: 350V On-state resistance: 6Ω Type of transistor: N-MOSFET Power dissipation: 1.6W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 1A Mounting: SMD Case: SOT89-3 |
Produkt ist nicht verfügbar |