TN0610N3-G-P003 MICROCHIP TECHNOLOGY
Hersteller: MICROCHIP TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 500mA; Idm: 3.2A; 1W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.5A
Pulsed drain current: 3.2A
Power dissipation: 1W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 500mA; Idm: 3.2A; 1W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.5A
Pulsed drain current: 3.2A
Power dissipation: 1W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 157 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
44+ | 1.63 EUR |
46+ | 1.56 EUR |
51+ | 1.42 EUR |
54+ | 1.33 EUR |
500+ | 1.3 EUR |
2000+ | 1.29 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TN0610N3-G-P003 MICROCHIP TECHNOLOGY
Description: MOSFET N-CH 100V 500MA TO92-3, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 500mA (Tj), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 750mA, 10V, Power Dissipation (Max): 1W (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: TO-92-3, Drive Voltage (Max Rds On, Min Rds On): 3V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V.
Weitere Produktangebote TN0610N3-G-P003 nach Preis ab 1.33 EUR bis 2.25 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
TN0610N3-G-P003 | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 500mA; Idm: 3.2A; 1W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.5A Pulsed drain current: 3.2A Power dissipation: 1W Case: TO92 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: THT Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 157 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||
TN0610N3-G-P003 | Hersteller : Microchip Technology | Trans MOSFET N-CH Si 100V 0.5A 3-Pin TO-92 T/R |
auf Bestellung 157 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||
TN0610N3-G-P003 | Hersteller : Microchip Technology | MOSFETs N-CH Enhancmnt Mode MOSFET |
auf Bestellung 2620 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
TN0610N3-G-P003 |
auf Bestellung 7500 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||
TN0610N3-G-P003 | Hersteller : Microchip Technology | Trans MOSFET N-CH Si 100V 0.5A 3-Pin TO-92 T/R |
Produkt ist nicht verfügbar |
||||||||||||||
TN0610N3-G-P003 | Hersteller : Microchip Technology | Trans MOSFET N-CH Si 100V 0.5A 3-Pin TO-92 T/R |
Produkt ist nicht verfügbar |
||||||||||||||
TN0610N3-G-P003 | Hersteller : Microchip Technology |
Description: MOSFET N-CH 100V 500MA TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Tj) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 750mA, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V |
Produkt ist nicht verfügbar |