TN0604N3-G Microchip Technology
Hersteller: Microchip TechnologyDescription: MOSFET N-CH 40V 700MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Tj)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.5A, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 20 V
auf Bestellung 454 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 2.25 EUR |
| 25+ | 1.87 EUR |
| 100+ | 1.72 EUR |
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Technische Details TN0604N3-G Microchip Technology
Description: MOSFET N-CH 40V 700MA TO92-3, Packaging: Bag, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 700mA (Tj), Rds On (Max) @ Id, Vgs: 750mOhm @ 1.5A, 10V, Power Dissipation (Max): 740mW (Ta), Vgs(th) (Max) @ Id: 1.6V @ 1mA, Supplier Device Package: TO-92-3, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 20 V.
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TN0604N3-G | Hersteller : Microchip Technology |
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auf Bestellung 958 Stücke: Lieferzeit 10-14 Tag (e) |
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TN0604N3-G | Hersteller : Microchip Technology |
Trans MOSFET N-CH Si 40V 0.7A 3-Pin TO-92 Bag |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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TN0604N3-G | Hersteller : Microchip Technology |
Trans MOSFET N-CH Si 40V 0.7A 3-Pin TO-92 Bag |
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TN0604N3-G | Hersteller : Microchip Technology |
Trans MOSFET N-CH Si 40V 0.7A 3-Pin TO-92 Bag |
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TN0604N3-G | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 700mA; Idm: 4.6A; 740mW; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 0.7A Pulsed drain current: 4.6A Power dissipation: 0.74W Case: TO92 Gate-source voltage: ±20V On-state resistance: 0.75Ω Mounting: THT Kind of package: bulk Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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TN0604N3-G | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 700mA; Idm: 4.6A; 740mW; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 0.7A Pulsed drain current: 4.6A Power dissipation: 0.74W Case: TO92 Gate-source voltage: ±20V On-state resistance: 0.75Ω Mounting: THT Kind of package: bulk Kind of channel: enhanced |
Produkt ist nicht verfügbar |