TN0604N3-G-P005 Microchip Technology
auf Bestellung 1045 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 2.48 EUR |
| 100+ | 2.01 EUR |
| 500+ | 1.87 EUR |
| 1000+ | 1.78 EUR |
| 4000+ | 1.76 EUR |
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Technische Details TN0604N3-G-P005 Microchip Technology
Description: MOSFET N-CH 40V 700MA TO92-3, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 700mA (Tj), Rds On (Max) @ Id, Vgs: 750mOhm @ 1.5A, 10V, Power Dissipation (Max): 740mW (Ta), Vgs(th) (Max) @ Id: 1.6V @ 1mA, Supplier Device Package: TO-92-3, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 20 V.
Weitere Produktangebote TN0604N3-G-P005
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis ohne MwSt |
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| TN0604N3-G-P005 | Hersteller : Microchip Technology |
 Trans MOSFET N-CH Si 40V 0.7A 3-Pin TO-92 T/R |
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TN0604N3-G-P005 | Hersteller : Microchip Technology |
Trans MOSFET N-CH Si 40V 0.7A 3-Pin TO-92 T/R |
Produkt ist nicht verfügbar |
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| TN0604N3-G-P005 | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 700mA; Idm: 4.6A; 740mW; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 0.7A Pulsed drain current: 4.6A Power dissipation: 0.74W Case: TO92 Gate-source voltage: ±20V On-state resistance: 0.75Ω Mounting: THT Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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,TO-226_straightlead.jpg "TN0604N3-G-P005") |
TN0604N3-G-P005 | Hersteller : Microchip Technology |
Description: MOSFET N-CH 40V 700MA TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 700mA (Tj) Rds On (Max) @ Id, Vgs: 750mOhm @ 1.5A, 10V Power Dissipation (Max): 740mW (Ta) Vgs(th) (Max) @ Id: 1.6V @ 1mA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 20 V |
Produkt ist nicht verfügbar |
|
| TN0604N3-G-P005 | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 700mA; Idm: 4.6A; 740mW; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 0.7A Pulsed drain current: 4.6A Power dissipation: 0.74W Case: TO92 Gate-source voltage: ±20V On-state resistance: 0.75Ω Mounting: THT Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |