auf Bestellung 566 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 2.2 EUR |
| 10+ | 1.76 EUR |
| 100+ | 1.4 EUR |
| 500+ | 1.18 EUR |
| 1000+ | 0.89 EUR |
| 5000+ | 0.86 EUR |
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Technische Details TK7R4A10PL,S4X Toshiba
Description: X35 PB-F POWER MOSFET TRANSISTOR, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 7.4mOhm @ 25A, 10V, Power Dissipation (Max): 42W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 500µA, Supplier Device Package: TO-220SIS, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V.
Weitere Produktangebote TK7R4A10PL,S4X nach Preis ab 1.33 EUR bis 3.08 EUR
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TK7R4A10PL,S4X | Hersteller : Toshiba Semiconductor and Storage |
 Description: X35 PB-F POWER MOSFET TRANSISTORPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 25A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 500µA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V |
auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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