auf Bestellung 143 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 2.5 EUR |
| 10+ | 2.01 EUR |
| 100+ | 1.69 EUR |
| 250+ | 1.57 EUR |
| 500+ | 1.4 EUR |
| 1000+ | 1.13 EUR |
| 5000+ | 1.12 EUR |
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Technische Details TK7A60W5,S5VX Toshiba
Description: MOSFET N-CH 600V 7A TO220SIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V, Power Dissipation (Max): 30W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 350µA, Supplier Device Package: TO-220SIS, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V.
Weitere Produktangebote TK7A60W5,S5VX nach Preis ab 2.52 EUR bis 2.52 EUR
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TK7A60W5,S5VX | Hersteller : Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 600V 7A TO220SISPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 350µA Supplier Device Package: TO-220SIS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V |
auf Bestellung 46 Stücke: Lieferzeit 10-14 Tag (e) |
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