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TK750A60F,S4X Toshiba Semiconductor and Storage
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Description: MOSFET N-CH 600V 10A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 300 V
auf Bestellung 893 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
7+ | 2.71 EUR |
50+ | 2.19 EUR |
100+ | 1.8 EUR |
500+ | 1.52 EUR |
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Technische Details TK750A60F,S4X Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 10A TO220SIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V, Power Dissipation (Max): 40W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220SIS, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 300 V.
Weitere Produktangebote TK750A60F,S4X nach Preis ab 1.21 EUR bis 2.76 EUR
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TK750A60F,S4X | Hersteller : Toshiba |
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auf Bestellung 611 Stücke: Lieferzeit 10-14 Tag (e) |
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TK750A60F,S4X | Hersteller : Toshiba |
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Produkt ist nicht verfügbar |
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TK750A60F,S4X | Hersteller : Toshiba |
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Produkt ist nicht verfügbar |