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auf Bestellung 1502 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
145+ | 1.07 EUR |
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Technische Details TK6P60W,RVQ Toshiba
Description: MOSFET N CH 600V 6.2A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), Rds On (Max) @ Id, Vgs: 820mOhm @ 3.1A, 10V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 310µA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V.
Weitere Produktangebote TK6P60W,RVQ nach Preis ab 1.07 EUR bis 3.1 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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TK6P60W,RVQ | Hersteller : Toshiba |
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auf Bestellung 1502 Stücke: Lieferzeit 14-21 Tag (e) |
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TK6P60W,RVQ | Hersteller : Toshiba |
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auf Bestellung 2003 Stücke: Lieferzeit 10-14 Tag (e) |
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TK6P60W,RVQ | Hersteller : Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) Rds On (Max) @ Id, Vgs: 820mOhm @ 3.1A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 310µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V |
auf Bestellung 1999 Stücke: Lieferzeit 10-14 Tag (e) |
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TK6P60W,RVQ | Hersteller : Toshiba |
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Produkt ist nicht verfügbar |
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TK6P60W,RVQ | Hersteller : Toshiba |
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Produkt ist nicht verfügbar |
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TK6P60W,RVQ | Hersteller : Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) Rds On (Max) @ Id, Vgs: 820mOhm @ 3.1A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 310µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V |
Produkt ist nicht verfügbar |