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TK60F10N1L,LXGQ

TK60F10N1L,LXGQ Toshiba Semiconductor and Storage

docget.jsp?did=58169&prodName=TK60F10N1L Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 60A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 6.11mOhm @ 30A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Supplier Device Package: TO-220SM(W)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 10 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+1.69 EUR
Mindestbestellmenge: 1000
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Technische Details TK60F10N1L,LXGQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 100V 60A TO220SM, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Ta), Rds On (Max) @ Id, Vgs: 6.11mOhm @ 30A, 10V, Power Dissipation (Max): 205W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 500µA, Supplier Device Package: TO-220SM(W), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 10 V.

Weitere Produktangebote TK60F10N1L,LXGQ nach Preis ab 1.6 EUR bis 3.56 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
TK60F10N1L,LXGQ TK60F10N1L,LXGQ Hersteller : Toshiba TK60F10N1L_datasheet_en_20200624-1915234.pdf MOSFET PD=205W F=1MHZ AEC-Q101
auf Bestellung 2906 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3.56 EUR
10+ 2.94 EUR
100+ 2.36 EUR
250+ 2.18 EUR
500+ 1.99 EUR
1000+ 1.67 EUR
2000+ 1.6 EUR
TK60F10N1L,LXGQ TK60F10N1L,LXGQ Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=58169&prodName=TK60F10N1L Description: MOSFET N-CH 100V 60A TO220SM
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 6.11mOhm @ 30A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Supplier Device Package: TO-220SM(W)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 10 V
auf Bestellung 1750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.56 EUR
10+ 2.96 EUR
100+ 2.35 EUR
500+ 1.99 EUR
Mindestbestellmenge: 5
TK60F10N1L,LXGQ TK60F10N1L,LXGQ Hersteller : Toshiba tk60f10n1l_datasheet_en_20200624.pdf Trans MOSFET N-CH Si 100V 60A Automotive AEC-Q101 3-Pin(2+Tab) TO-220SM(W) T/R
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