TK5R3E08QM,S1X

TK5R3E08QM,S1X Toshiba Semiconductor and Storage


Hersteller: Toshiba Semiconductor and Storage
Description: UMOS10 TO-220AB 80V 5.3MOHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V
auf Bestellung 81 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.38 EUR
50+ 1.91 EUR
Mindestbestellmenge: 8
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Technische Details TK5R3E08QM,S1X Toshiba Semiconductor and Storage

Description: UMOS10 TO-220AB 80V 5.3MOHM, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 5.3mOhm @ 50A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 700µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V.

Weitere Produktangebote TK5R3E08QM,S1X nach Preis ab 1.1 EUR bis 2.39 EUR

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TK5R3E08QM,S1X TK5R3E08QM,S1X Hersteller : Toshiba TK5R3E08QM_datasheet_en_20210201-2486517.pdf MOSFET UMOS10 TO-220AB 80V 5.3mohm
auf Bestellung 6147 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.39 EUR
10+ 1.94 EUR
100+ 1.58 EUR
250+ 1.46 EUR
500+ 1.37 EUR
1000+ 1.14 EUR
2500+ 1.1 EUR
Mindestbestellmenge: 2