TK56A12N1,S4X Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: MOSFET N-CH 120V 56A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 28A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 60 V
auf Bestellung 137 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 3.17 EUR |
| 50+ | 2.55 EUR |
| 100+ | 2.1 EUR |
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Technische Details TK56A12N1,S4X Toshiba Semiconductor and Storage
Description: MOSFET N-CH 120V 56A TO220SIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 56A (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 28A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220SIS, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 60 V.
Weitere Produktangebote TK56A12N1,S4X nach Preis ab 2.78 EUR bis 3.84 EUR
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TK56A12N1,S4X | Hersteller : Toshiba |
MOSFET MOSFET NCh6.2ohm VGS10V10uAVDS120V |
auf Bestellung 264 Stücke: Lieferzeit 10-14 Tag (e) |
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