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auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
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2500+ | 0.82 EUR |
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Technische Details TK4R4P06PL,RQ Toshiba
Description: MOSFET N-CHANNEL 60V 58A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 58A (Tc), Rds On (Max) @ Id, Vgs: 4.4mOhm @ 29A, 10V, Power Dissipation (Max): 87W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 500µA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 48.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 30 V.
Weitere Produktangebote TK4R4P06PL,RQ nach Preis ab 0.62 EUR bis 2.25 EUR
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TK4R4P06PL,RQ | Hersteller : Toshiba |
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auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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TK4R4P06PL,RQ | Hersteller : Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 29A, 10V Power Dissipation (Max): 87W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 500µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 48.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 30 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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TK4R4P06PL,RQ | Hersteller : Toshiba |
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auf Bestellung 995 Stücke: Lieferzeit 14-21 Tag (e) |
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TK4R4P06PL,RQ | Hersteller : Toshiba |
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auf Bestellung 995 Stücke: Lieferzeit 14-21 Tag (e) |
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TK4R4P06PL,RQ | Hersteller : Toshiba |
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auf Bestellung 13540 Stücke: Lieferzeit 10-14 Tag (e) |
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TK4R4P06PL,RQ | Hersteller : Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 29A, 10V Power Dissipation (Max): 87W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 500µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 48.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 30 V |
auf Bestellung 3385 Stücke: Lieferzeit 10-14 Tag (e) |
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TK4R4P06PL,RQ | Hersteller : Toshiba |
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Produkt ist nicht verfügbar |