![TK3R9E10PL,S1X TK3R9E10PL,S1X](https://www.mouser.com/images/toshibaamericaelectroniccomponentsinc/lrg/TO_220_3_t.jpg)
auf Bestellung 150 Stücke:
Lieferzeit 178-182 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 3.59 EUR |
10+ | 2.57 EUR |
100+ | 2.31 EUR |
500+ | 1.99 EUR |
1000+ | 1.62 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TK3R9E10PL,S1X Toshiba
Description: X35 PB-F POWER MOSFET TRANSISTOR, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V, Power Dissipation (Max): 230W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 50 V.
Weitere Produktangebote TK3R9E10PL,S1X
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
![]() |
TK3R9E10PL,S1X | Hersteller : Toshiba Semiconductor and Storage |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 50 V |
Produkt ist nicht verfügbar |