auf Bestellung 1285 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 2.16 EUR |
| 10+ | 1.74 EUR |
| 100+ | 1.4 EUR |
| 500+ | 1.19 EUR |
| 1000+ | 0.95 EUR |
| 2500+ | 0.89 EUR |
| 5000+ | 0.87 EUR |
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Technische Details TK22A10N1,S4X Toshiba
Description: MOSFET N-CH 100V 22A TO220SIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 13.8mOhm @ 11A, 10V, Power Dissipation (Max): 30W (Tc), Vgs(th) (Max) @ Id: 4V @ 300µA, Supplier Device Package: TO-220SIS, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V.
Weitere Produktangebote TK22A10N1,S4X
| Foto | Bezeichnung | Hersteller | Beschreibung |
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TK22A10N1,S4X | Hersteller : Toshiba |
 Trans MOSFET N-CH Si 100V 52A 3-Pin(3+Tab) TO-220SIS Magazine |
Produkt ist nicht verfügbar |
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TK22A10N1,S4X | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 22A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 13.8mOhm @ 11A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4V @ 300µA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V |
Produkt ist nicht verfügbar |