![TK20N60W5,S1VF TK20N60W5,S1VF](https://www.mouser.com/images/mouserelectronics/lrg/TO_247_3_t.jpg)
auf Bestellung 114 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 7.94 EUR |
10+ | 5.26 EUR |
30+ | 4.38 EUR |
120+ | 3.64 EUR |
270+ | 3.01 EUR |
510+ | 2.99 EUR |
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Technische Details TK20N60W5,S1VF Toshiba
Description: MOSFET N-CH 600V 20A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), Rds On (Max) @ Id, Vgs: 175mOhm @ 10A, 10V, Power Dissipation (Max): 165W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1mA, Supplier Device Package: TO-247, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V.
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TK20N60W5,S1VF | Hersteller : Toshiba |
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TK20N60W5,S1VF | Hersteller : Toshiba Semiconductor and Storage |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 175mOhm @ 10A, 10V Power Dissipation (Max): 165W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V |
Produkt ist nicht verfügbar |