auf Bestellung 421 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 1.62 EUR |
| 10+ | 1.3 EUR |
| 100+ | 1.03 EUR |
| 500+ | 0.92 EUR |
| 1000+ | 0.65 EUR |
| 5000+ | 0.64 EUR |
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Technische Details TK1K2A60F,S4X Toshiba
Description: MOSFET N-CH 600V 6A TO220SIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V, Power Dissipation (Max): 35W (Tc), Vgs(th) (Max) @ Id: 4V @ 630µA, Supplier Device Package: TO-220SIS, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 300 V.
Weitere Produktangebote TK1K2A60F,S4X nach Preis ab 3.49 EUR bis 3.49 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| TK1K2A60F,S4X | Hersteller : Toshiba |
 N-Channel 600V 6A (Ta) 35W (Tc) Through Hole TO-220SIS TK1K2A60F,S4X(S TTK1k2a60fAnzahl je Verpackung: 5 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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TK1K2A60F,S4X | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 6A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 630µA Supplier Device Package: TO-220SIS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 300 V |
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