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TK160F10N1L,LXGQ

TK160F10N1L,LXGQ Toshiba Semiconductor and Storage

TK160F10N1L_datasheet_en_20200624.pdf?did=35808&prodName=TK160F10N1L Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 160A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-220SM(W)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 10 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+2.93 EUR
2000+ 2.76 EUR
5000+ 2.73 EUR
Mindestbestellmenge: 1000
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Technische Details TK160F10N1L,LXGQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 100V 160A TO220SM, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 160A (Ta), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 1mA, Supplier Device Package: TO-220SM(W), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 10 V.

Weitere Produktangebote TK160F10N1L,LXGQ nach Preis ab 2.92 EUR bis 5.68 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
TK160F10N1L,LXGQ TK160F10N1L,LXGQ Hersteller : Toshiba TK160F10N1L_datasheet_en_20200624-1114616.pdf MOSFETs PD=375W F=1MHZ AEC-Q101
auf Bestellung 26948 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+5.67 EUR
10+ 4.77 EUR
25+ 4.49 EUR
100+ 3.85 EUR
250+ 3.63 EUR
500+ 3.41 EUR
1000+ 2.92 EUR
TK160F10N1L,LXGQ TK160F10N1L,LXGQ Hersteller : Toshiba Semiconductor and Storage TK160F10N1L_datasheet_en_20200624.pdf?did=35808&prodName=TK160F10N1L Description: MOSFET N-CH 100V 160A TO220SM
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-220SM(W)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 10 V
auf Bestellung 8800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.68 EUR
10+ 4.76 EUR
100+ 3.85 EUR
500+ 3.43 EUR
Mindestbestellmenge: 4
TK160F10N1L,LXGQ TK160F10N1L,LXGQ Hersteller : Toshiba tk160f10n1l_datasheet_en_20200624.pdf Trans MOSFET N-CH Si 100V 160A Automotive AEC-Q101 3-Pin(2+Tab) TO-220SM(W) T/R
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