![TK160F10N1L,LQ TK160F10N1L,LQ](https://www.mouser.com/images/toshibaamericaelectroniccomponentsinc/lrg/toshiba_TO-220SM_W_DSL.jpg)
auf Bestellung 20289 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 4.33 EUR |
10+ | 3.64 EUR |
25+ | 3.43 EUR |
100+ | 2.82 EUR |
250+ | 2.78 EUR |
500+ | 2.31 EUR |
1000+ | 2.18 EUR |
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Technische Details TK160F10N1L,LQ Toshiba
Description: MOSFET N-CH 100V 160A TO220SM, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 160A (Ta), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 1mA, Supplier Device Package: TO-220SM(W), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 10 V.
Weitere Produktangebote TK160F10N1L,LQ nach Preis ab 2.62 EUR bis 4.35 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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TK160F10N1L,LQ | Hersteller : Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Ta) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: TO-220SM(W) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 10 V |
auf Bestellung 962 Stücke: Lieferzeit 10-14 Tag (e) |
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TK160F10N1L,LQ | Hersteller : Toshiba |
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Produkt ist nicht verfügbar |
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TK160F10N1L,LQ | Hersteller : Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Ta) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: TO-220SM(W) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 10 V |
Produkt ist nicht verfügbar |