auf Bestellung 55 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 4.73 EUR |
| 10+ | 4.33 EUR |
| 30+ | 3.82 EUR |
| 120+ | 3.29 EUR |
| 270+ | 3.2 EUR |
| 510+ | 2.96 EUR |
| 1020+ | 2.59 EUR |
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Technische Details TK14N65W,S1F Toshiba
Description: MOSFET N-CH 650V 13.7A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta), Rds On (Max) @ Id, Vgs: 250mOhm @ 6.9A, 10V, Power Dissipation (Max): 130W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 690µA, Supplier Device Package: TO-247, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V.
Weitere Produktangebote TK14N65W,S1F nach Preis ab 5.19 EUR bis 5.19 EUR
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TK14N65W,S1F | Hersteller : Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 650V 13.7A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta) Rds On (Max) @ Id, Vgs: 250mOhm @ 6.9A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 690µA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V |
auf Bestellung 26 Stücke: Lieferzeit 10-14 Tag (e) |
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