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TK13P25D,RQ

TK13P25D,RQ Toshiba

TK13P25D_datasheet_en_20140106-1649876.pdf Hersteller: Toshiba
MOSFET Pb-F POWER MOSFET TRANSISTOR DPAK-OS PD=96W F=1MHZ
auf Bestellung 3986 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.42 EUR
10+ 1.17 EUR
100+ 0.91 EUR
500+ 0.77 EUR
1000+ 0.67 EUR
2000+ 0.57 EUR
10000+ 0.56 EUR
Mindestbestellmenge: 2
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Technische Details TK13P25D,RQ Toshiba

Description: PB-F POWER MOSFET TRANSISTOR DPA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V, Power Dissipation (Max): 96W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 1mA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V.

Weitere Produktangebote TK13P25D,RQ nach Preis ab 0.58 EUR bis 1.41 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
TK13P25D,RQ Hersteller : Toshiba Semiconductor and Storage Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2000+0.58 EUR
Mindestbestellmenge: 2000
TK13P25D,RQ Hersteller : Toshiba Semiconductor and Storage Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
auf Bestellung 2398 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13+1.41 EUR
16+ 1.16 EUR
100+ 0.9 EUR
500+ 0.76 EUR
1000+ 0.62 EUR
Mindestbestellmenge: 13
TK13P25D,RQ TK13P25D,RQ Hersteller : Toshiba 1536docget.jsplangenpidtk13p25dtypedatasheet.jsplangenpidtk13p25dtype.pdf Trans MOSFET N-CH Si 250V 13A 3-Pin(2+Tab) DPAK T/R
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