auf Bestellung 187 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.69 EUR |
| 10+ | 7.60 EUR |
| 25+ | 7.59 EUR |
| 50+ | 4.61 EUR |
| 100+ | 4.07 EUR |
| 250+ | 3.82 EUR |
| 500+ | 3.29 EUR |
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Technische Details TK110A65Z,S4X Toshiba
Description: MOSFET N-CH 650V 24A TO220SIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 4V @ 1.02mA, Supplier Device Package: TO-220SIS, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V.
Weitere Produktangebote TK110A65Z,S4X nach Preis ab 8.57 EUR bis 8.57 EUR
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TK110A65Z,S4X | Hersteller : Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 650V 24A TO220SISPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.02mA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V |
auf Bestellung 42 Stücke: Lieferzeit 10-14 Tag (e) |
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| TK110A65Z,S4X | Hersteller : Toshiba |
Trans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-220SIS Tube |
Produkt ist nicht verfügbar |