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TK100L60W,VQ Toshiba Semiconductor and Storage

Name: TK100L60W,VQ
Brand: Toshiba Semiconductor and Storage
SKU: 3945698-3
Price: 41.57 EUR
Availability: InStock

TK100L60W_datasheet_en_20131225.pdf?did=13695&prodName=TK100L60W

Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 100A TO3P
Packaging: Tube
Package / Case: TO-3PL
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 50A, 10V
Power Dissipation (Max): 797W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 5mA
Supplier Device Package: TO-3P(L)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 30 V

auf Bestellung 432 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Preis ohne MwSt
1+	53.49 EUR
10+	47.53 EUR
100+	41.57 EUR

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Technische Details TK100L60W,VQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 600V 100A TO3P, Packaging: Tube, Package / Case: TO-3PL, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 50A, 10V, Power Dissipation (Max): 797W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 5mA, Supplier Device Package: TO-3P(L), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 30 V.