auf Bestellung 95 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 6.09 EUR |
10+ | 6.04 EUR |
50+ | 4.8 EUR |
100+ | 4.12 EUR |
500+ | 3.66 EUR |
1000+ | 3.04 EUR |
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Technische Details TK100A10N1,S4X Toshiba
Description: MOSFET N-CH 100V 100A TO220SIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3.8mOhm @ 50A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220SIS, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V.
Weitere Produktangebote TK100A10N1,S4X nach Preis ab 4.85 EUR bis 6.12 EUR
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TK100A10N1,S4X | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 100A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 50A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V |
auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
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TK100A10N1,S4X | Hersteller : Toshiba | Trans MOSFET N-CH Si 100V 207A 3-Pin(3+Tab) TO-220SIS Magazine |
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