TK095N65Z5,S1F(S Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: 650V DTMOS6-HIGH SPEED DIODE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 14.5A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.27mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 300 V
Description: 650V DTMOS6-HIGH SPEED DIODE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 14.5A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.27mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 300 V
auf Bestellung 195 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 10.81 EUR |
10+ | 7.31 EUR |
100+ | 5.31 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TK095N65Z5,S1F(S Toshiba Semiconductor and Storage
Description: 650V DTMOS6-HIGH SPEED DIODE, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Ta), Rds On (Max) @ Id, Vgs: 95mOhm @ 14.5A, 10V, Power Dissipation (Max): 230W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.27mA, Supplier Device Package: TO-247, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 300 V.
Weitere Produktangebote TK095N65Z5,S1F(S
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
TK095N65Z5,S1F(S | Hersteller : Toshiba | TO247 650V N-CH MOSFET |
Produkt ist nicht verfügbar |