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TK090Z65Z,S1F Toshiba
auf Bestellung 23 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 9.96 EUR |
10+ | 8.64 EUR |
25+ | 7.13 EUR |
100+ | 6.69 EUR |
250+ | 6.42 EUR |
500+ | 6.2 EUR |
1000+ | 5.86 EUR |
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Technische Details TK090Z65Z,S1F Toshiba
Description: MOSFET N-CH 650V 30A TO247-4L, Packaging: Tube, Part Status: Active, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V, Power Dissipation (Max): 230W (Tc), Vgs(th) (Max) @ Id: 4V @ 1.27mA, Supplier Device Package: TO-247-4L(T), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V.
Weitere Produktangebote TK090Z65Z,S1F nach Preis ab 8.68 EUR bis 10.12 EUR
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TK090Z65Z,S1F | Hersteller : Toshiba Semiconductor and Storage |
![]() Packaging: Tube Part Status: Active Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.27mA Supplier Device Package: TO-247-4L(T) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V |
auf Bestellung 25 Stücke: Lieferzeit 10-14 Tag (e) |
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