auf Bestellung 963 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 16.83 EUR |
| 10+ | 14.77 EUR |
| 30+ | 14.03 EUR |
| 120+ | 12.55 EUR |
| 510+ | 11.09 EUR |
| 1020+ | 9.96 EUR |
| 2520+ | 9.59 EUR |
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Technische Details TK040N65Z,S1F Toshiba
Description: MOSFET N-CH 650V 57A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 57A (Ta), Rds On (Max) @ Id, Vgs: 40mOhm @ 28.5A, 10V, Power Dissipation (Max): 360W (Tc), Vgs(th) (Max) @ Id: 4V @ 2.85mA, Supplier Device Package: TO-247, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 300 V.
Weitere Produktangebote TK040N65Z,S1F nach Preis ab 17.09 EUR bis 17.09 EUR
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TK040N65Z,S1F | Hersteller : Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 650V 57A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 57A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 28.5A, 10V Power Dissipation (Max): 360W (Tc) Vgs(th) (Max) @ Id: 4V @ 2.85mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 300 V |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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