![TJ90S04M3L,LQ TJ90S04M3L,LQ](https://www.mouser.com/images/toshibaamericaelectroniccomponentsinc/lrg/dpak.jpg)
auf Bestellung 14848 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 3.47 EUR |
10+ | 2.9 EUR |
100+ | 2.31 EUR |
250+ | 2.13 EUR |
500+ | 1.94 EUR |
1000+ | 1.83 EUR |
2000+ | 1.54 EUR |
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Technische Details TJ90S04M3L,LQ Toshiba
Description: PB-F POWER MOSFET TRANSISTOR DPA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Ta), Rds On (Max) @ Id, Vgs: 4.3mOhm @ 45A, 10V, Power Dissipation (Max): 180W (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: DPAK+, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +10V, -20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 10 V.
Weitere Produktangebote TJ90S04M3L,LQ nach Preis ab 1.51 EUR bis 3.34 EUR
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TJ90S04M3L,LQ | Hersteller : Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Ta) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 45A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 10 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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TJ90S04M3L,LQ | Hersteller : Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Ta) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 45A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 10 V |
auf Bestellung 3466 Stücke: Lieferzeit 10-14 Tag (e) |
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