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TJ30S06M3L(T6L1,NQ

TJ30S06M3L(T6L1,NQ Toshiba

tj30s06m3l_datasheet_en_20200624.pdf Hersteller: Toshiba
Trans MOSFET P-CH Si 60V 30A Automotive AEC-Q101 3-Pin(2+Tab) DPAK+ T/R
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
105+1.47 EUR
124+ 1.21 EUR
145+ 1 EUR
200+ 0.91 EUR
500+ 0.81 EUR
1000+ 0.73 EUR
2000+ 0.66 EUR
Mindestbestellmenge: 105
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Technische Details TJ30S06M3L(T6L1,NQ Toshiba

Description: MOSFET P-CH 60V 30A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), Rds On (Max) @ Id, Vgs: 21.8mOhm @ 15A, 10V, Power Dissipation (Max): 68W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: DPAK+, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): +10V, -20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 10 V.

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TJ30S06M3L(T6L1,NQ TJ30S06M3L(T6L1,NQ Hersteller : Toshiba TJ30S06M3L_datasheet_en_20200624-1858413.pdf MOSFETs P-Ch MOS -30A -60V 68W 3950pF 0.0218
auf Bestellung 6937 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.38 EUR
10+ 1.99 EUR
100+ 1.57 EUR
250+ 1.45 EUR
500+ 1.33 EUR
1000+ 1.13 EUR
2000+ 1.07 EUR
Mindestbestellmenge: 2
TJ30S06M3L(T6L1,NQ TJ30S06M3L(T6L1,NQ Hersteller : Toshiba tj30s06m3l_datasheet_en_20200624.pdf Trans MOSFET P-CH Si 60V 30A Automotive AEC-Q101 3-Pin(2+Tab) DPAK+ T/R
Produkt ist nicht verfügbar
TJ30S06M3L(T6L1,NQ TJ30S06M3L(T6L1,NQ Hersteller : Toshiba tj30s06m3l_datasheet_en_20200624.pdf Trans MOSFET P-CH Si 60V 30A Automotive 3-Pin(2+Tab) DPAK+ T/R
Produkt ist nicht verfügbar
TJ30S06M3L(T6L1,NQ TJ30S06M3L(T6L1,NQ Hersteller : Toshiba Semiconductor and Storage TJ30S06M3L_datasheet_en_20200624.pdf?did=22571&prodName=TJ30S06M3L Description: MOSFET P-CH 60V 30A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 21.8mOhm @ 15A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 10 V
Produkt ist nicht verfügbar
TJ30S06M3L(T6L1,NQ TJ30S06M3L(T6L1,NQ Hersteller : Toshiba Semiconductor and Storage TJ30S06M3L_datasheet_en_20200624.pdf?did=22571&prodName=TJ30S06M3L Description: MOSFET P-CH 60V 30A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 21.8mOhm @ 15A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 10 V
Produkt ist nicht verfügbar