Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > TJ15S06M3L,LXHQ
TJ15S06M3L,LXHQ

TJ15S06M3L,LXHQ Toshiba Semiconductor and Storage

TJ15S06M3L_datasheet_en_20200624.pdf?did=22424&prodName=TJ15S06M3L Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 15A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 7.5A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 10 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2000+0.59 EUR
6000+ 0.57 EUR
Mindestbestellmenge: 2000
Produktrezensionen
Produktbewertung abgeben

Technische Details TJ15S06M3L,LXHQ Toshiba Semiconductor and Storage

Description: MOSFET P-CH 60V 15A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 7.5A, 10V, Power Dissipation (Max): 41W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: DPAK+, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): +10V, -20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 10 V.

Weitere Produktangebote TJ15S06M3L,LXHQ nach Preis ab 0.63 EUR bis 1.43 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
TJ15S06M3L,LXHQ TJ15S06M3L,LXHQ Hersteller : Toshiba Semiconductor and Storage TJ15S06M3L_datasheet_en_20200624.pdf?did=22424&prodName=TJ15S06M3L Description: MOSFET P-CH 60V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 7.5A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 10 V
auf Bestellung 10533 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13+1.43 EUR
15+ 1.17 EUR
100+ 0.91 EUR
500+ 0.77 EUR
1000+ 0.63 EUR
Mindestbestellmenge: 13
TJ15S06M3L,LXHQ TJ15S06M3L,LXHQ Hersteller : Toshiba TJ15S06M3L_datasheet_en_20200624-1840196.pdf MOSFET 41W 1MHz Automotive; AEC-Q101
auf Bestellung 3878 Stücke:
Lieferzeit 10-14 Tag (e)