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TJ15P04M3,RQ(S Toshiba Semiconductor and Storage
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Description: MOSFET P-CH 40V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 7.5A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
auf Bestellung 798 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
13+ | 1.36 EUR |
16+ | 1.1 EUR |
100+ | 0.86 EUR |
500+ | 0.73 EUR |
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Technische Details TJ15P04M3,RQ(S Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 15A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), Rds On (Max) @ Id, Vgs: 36mOhm @ 7.5A, 10V, Power Dissipation (Max): 29W (Tc), Vgs(th) (Max) @ Id: 2V @ 100µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V.
Weitere Produktangebote TJ15P04M3,RQ(S nach Preis ab 0.36 EUR bis 1.45 EUR
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TJ15P04M3,RQ(S | Hersteller : Toshiba |
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auf Bestellung 1736 Stücke: Lieferzeit 10-14 Tag (e) |
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TJ15P04M3,RQ(S | Hersteller : Toshiba |
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auf Bestellung 5718 Stücke: Lieferzeit 14-21 Tag (e) |
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TJ15P04M3,RQ(S | Hersteller : Toshiba |
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TJ15P04M3,RQ(S | Hersteller : Toshiba |
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TJ15P04M3,RQ(S | Hersteller : Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 7.5A, 10V Power Dissipation (Max): 29W (Tc) Vgs(th) (Max) @ Id: 2V @ 100µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V |
Produkt ist nicht verfügbar |