TGL200CU06 DIOTEC SEMICONDUCTOR
Hersteller: DIOTEC SEMICONDUCTORCategory: Diodes - others
Description: Diode: TVS+FRD; 600V; 300W; DO213AA; 75ns; Ifsm: 1A; reel,tape; ±10%
Type of diode: TVS+FRD
Case: DO213AA
Mounting: SMD
Max. off-state voltage: 0.6kV
Max. forward impulse current: 1A
Tolerance: ±10%
Reverse recovery time: 75ns
Breakdown voltage: 200V
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: snubber diode; ultrafast switching
Peak pulse power dissipation: 0.3kW
Anzahl je Verpackung: 5000 Stücke
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Technische Details TGL200CU06 DIOTEC SEMICONDUCTOR
Category: Diodes - others, Description: Diode: TVS+FRD; 600V; 300W; DO213AA; 75ns; Ifsm: 1A; reel,tape; ±10%, Type of diode: TVS+FRD, Case: DO213AA, Mounting: SMD, Max. off-state voltage: 0.6kV, Max. forward impulse current: 1A, Tolerance: ±10%, Reverse recovery time: 75ns, Breakdown voltage: 200V, Leakage current: 5µA, Kind of package: reel; tape, Features of semiconductor devices: snubber diode; ultrafast switching, Peak pulse power dissipation: 0.3kW, Anzahl je Verpackung: 5000 Stücke.
Weitere Produktangebote TGL200CU06
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TGL200CU06 | Hersteller : Diotec Semiconductor |
Description: TVS DIODE 162VWM 287VC DO213AB Packaging: Bulk Package / Case: DO-213AB, MELF Mounting Type: Surface Mount Type: Zener Operating Temperature: -50°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 1A Voltage - Reverse Standoff (Typ): 162V Supplier Device Package: DO-213AB (MELF) Bidirectional Channels: 1 Voltage - Breakdown (Min): 180V Voltage - Clamping (Max) @ Ipp: 287V Power - Peak Pulse: 300W Power Line Protection: No |
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TGL200CU06 | Hersteller : Diotec Semiconductor |
ESD Protection Diodes / TVS Diodes TVS, Melf, 150C, 300W, Unidir |
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TGL200CU06 | Hersteller : DIOTEC SEMICONDUCTOR |
Category: Diodes - others Description: Diode: TVS+FRD; 600V; 300W; DO213AA; 75ns; Ifsm: 1A; reel,tape; ±10% Type of diode: TVS+FRD Case: DO213AA Mounting: SMD Max. off-state voltage: 0.6kV Max. forward impulse current: 1A Tolerance: ±10% Reverse recovery time: 75ns Breakdown voltage: 200V Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: snubber diode; ultrafast switching Peak pulse power dissipation: 0.3kW |
Produkt ist nicht verfügbar |