TDB6HK180N16RRPB11BPSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: SCR MODULE IGBT LOW PWR ECONO2-7
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 175°C (TJ)
Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Current - Hold (Ih) (Max): 220 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1600A @ 50Hz
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Voltage - Off State: 1.6 kV
Description: SCR MODULE IGBT LOW PWR ECONO2-7
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 175°C (TJ)
Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Current - Hold (Ih) (Max): 220 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1600A @ 50Hz
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Voltage - Off State: 1.6 kV
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 248.56 EUR |
10+ | 232.81 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TDB6HK180N16RRPB11BPSA1 Infineon Technologies
Description: SCR MODULE IGBT LOW PWR ECONO2-7, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Operating Temperature: 175°C (TJ), Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode, Current - Hold (Ih) (Max): 220 mA, Current - Gate Trigger (Igt) (Max): 100 mA, Current - Non Rep. Surge 50, 60Hz (Itsm): 1600A @ 50Hz, Number of SCRs, Diodes: 3 SCRs, 3 Diodes, Voltage - Gate Trigger (Vgt) (Max): 2 V, Part Status: Active, Voltage - Off State: 1.6 kV.
Weitere Produktangebote TDB6HK180N16RRPB11BPSA1 nach Preis ab 290.43 EUR bis 290.43 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||
---|---|---|---|---|---|---|---|---|---|
TDB6HK180N16RRPB11BPSA1 | Hersteller : Infineon Technologies |
Description: TDB6HK180N16RR - LOW POWER ECONO Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: 175°C (TJ) Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode Current - Hold (Ih) (Max): 220 mA Current - Gate Trigger (Igt) (Max): 100 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1600A @ 50Hz Number of SCRs, Diodes: 3 SCRs, 3 Diodes Voltage - Gate Trigger (Vgt) (Max): 2 V Part Status: Active Voltage - Off State: 1.6 kV |
auf Bestellung 43 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||
TDB6HK180N16RRPB11BPSA1 | Hersteller : Infineon Technologies | SP001410962 |
Produkt ist nicht verfügbar |
||||||
TDB6HK180N16RRPB11BPSA1 | Hersteller : Infineon Technologies | 2.5kVAC1minInsulation IGBT-Module |
Produkt ist nicht verfügbar |
||||||
TDB6HK180N16RRPB11BPSA1 | Hersteller : Infineon Technologies | IGBT Modules N |
Produkt ist nicht verfügbar |