TBC857B,LM Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 100mA, 5mA
Current - Collector Cutoff (Max): 30nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 5V
Frequency - Transition: 80MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Description: TRANS PNP 50V 0.15A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 100mA, 5mA
Current - Collector Cutoff (Max): 30nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 5V
Frequency - Transition: 80MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.044 EUR |
6000+ | 0.042 EUR |
9000+ | 0.035 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TBC857B,LM Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 650mV @ 100mA, 5mA, Current - Collector Cutoff (Max): 30nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 5V, Frequency - Transition: 80MHz, Supplier Device Package: SOT-23-3, Part Status: Active, Current - Collector (Ic) (Max): 150 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 320 mW.
Weitere Produktangebote TBC857B,LM nach Preis ab 0.028 EUR bis 0.26 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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TBC857B,LM | Hersteller : Toshiba | Bipolar Transistors - BJT BJT PNP -0.15A -50V |
auf Bestellung 9437 Stücke: Lieferzeit 10-14 Tag (e) |
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TBC857B,LM | Hersteller : Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 0.15A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 100mA, 5mA Current - Collector Cutoff (Max): 30nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 5V Frequency - Transition: 80MHz Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 320 mW |
auf Bestellung 14207 Stücke: Lieferzeit 10-14 Tag (e) |
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TBC857B,LM | Hersteller : Toshiba | Trans GP BJT PNP 50V 0.15A 320mW 3-Pin SOT-23 |
Produkt ist nicht verfügbar |
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TBC857B,LM | Hersteller : Toshiba | Trans GP BJT PNP 50V 0.15A 320mW 3-Pin SOT-23 |
Produkt ist nicht verfügbar |