![SZMMBZ33VALT1G SZMMBZ33VALT1G](https://www.mouser.com/images/mouserelectronics/lrg/SOT_23_3_t.jpg)
auf Bestellung 25564 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
6+ | 0.49 EUR |
10+ | 0.35 EUR |
100+ | 0.17 EUR |
1000+ | 0.099 EUR |
3000+ | 0.084 EUR |
9000+ | 0.065 EUR |
24000+ | 0.063 EUR |
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Technische Details SZMMBZ33VALT1G onsemi
Description: DIODE ZENER 26V SOT23-3, Tolerance: ±5%, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Type: Zener, Configuration: 1 Pair Common Anode, Operating Temperature: -55°C ~ 150°C (TJ), Current - Peak Pulse (10/1000µs): 870mA, Voltage - Reverse Standoff (Typ): 26V, Voltage - Zener (Nom) (Vz): 26 V, Supplier Device Package: SOT-23-3 (TO-236), Unidirectional Channels: 2, Voltage - Breakdown (Min): 31.35V, Voltage - Clamping (Max) @ Ipp: 46V, Power - Peak Pulse: 40W, Power Line Protection: No, Grade: Automotive, Power - Max: 300 mW, Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA, Current - Reverse Leakage @ Vr: 50 nA @ 26 V, Qualification: AEC-Q101.
Weitere Produktangebote SZMMBZ33VALT1G
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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SZMMBZ33VALT1G | Hersteller : ONSEMI |
![]() tariffCode: 85411000 productTraceability: Yes-Date/Lot Code rohsCompliant: YES Anzahl der Pins: 3Pin(s) euEccn: NLR Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Bauform - Diode: SOT-23 hazardous: false Begrenzungsspannung Vc, max.: 46V Betriebsspannung: - rohsPhthalatesCompliant: YES Verlustleistung Pd: 225mW usEccn: EAR99 Produktpalette: SZMMBZxxxALT1G |
auf Bestellung 13310 Stücke: Lieferzeit 14-21 Tag (e) |
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SZMMBZ33VALT1G | Hersteller : ONSEMI |
![]() tariffCode: 85411000 productTraceability: Yes-Date/Lot Code rohsCompliant: YES Anzahl der Pins: 3Pin(s) euEccn: NLR Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Bauform - Diode: SOT-23 hazardous: false Begrenzungsspannung Vc, max.: 46V Betriebsspannung: - rohsPhthalatesCompliant: YES Verlustleistung Pd: 225mW usEccn: EAR99 Produktpalette: SZMMBZxxxALT1G |
auf Bestellung 13310 Stücke: Lieferzeit 14-21 Tag (e) |
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SZMMBZ33VALT1G | Hersteller : ON Semiconductor |
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auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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SZMMBZ33VALT1G | Hersteller : ONSEMI |
![]() Description: Diode: TVS array; 33V; 0.87A; 40W; double,common anode; SOT23; ±5% Type of diode: TVS array Breakdown voltage: 33V Max. forward impulse current: 0.87A Peak pulse power dissipation: 40W Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 26V Features of semiconductor devices: ESD protection Leakage current: 50nA Kind of package: reel; tape Application: automotive industry Tolerance: ±5% Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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SZMMBZ33VALT1G | Hersteller : onsemi |
![]() Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Configuration: 1 Pair Common Anode Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 870mA Voltage - Reverse Standoff (Typ): 26V Voltage - Zener (Nom) (Vz): 26 V Supplier Device Package: SOT-23-3 (TO-236) Unidirectional Channels: 2 Voltage - Breakdown (Min): 31.35V Voltage - Clamping (Max) @ Ipp: 46V Power - Peak Pulse: 40W Power Line Protection: No Grade: Automotive Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 26 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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SZMMBZ33VALT1G | Hersteller : onsemi |
![]() Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Configuration: 1 Pair Common Anode Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 870mA Voltage - Reverse Standoff (Typ): 26V Voltage - Zener (Nom) (Vz): 26 V Supplier Device Package: SOT-23-3 (TO-236) Unidirectional Channels: 2 Voltage - Breakdown (Min): 31.35V Voltage - Clamping (Max) @ Ipp: 46V Power - Peak Pulse: 40W Power Line Protection: No Grade: Automotive Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 26 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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SZMMBZ33VALT1G | Hersteller : ONSEMI |
![]() Description: Diode: TVS array; 33V; 0.87A; 40W; double,common anode; SOT23; ±5% Type of diode: TVS array Breakdown voltage: 33V Max. forward impulse current: 0.87A Peak pulse power dissipation: 40W Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 26V Features of semiconductor devices: ESD protection Leakage current: 50nA Kind of package: reel; tape Application: automotive industry Tolerance: ±5% |
Produkt ist nicht verfügbar |