Technische Details SUP85N02-03-E3 Vishay / Siliconix
Description: MOSFET N-CH 20V 85A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 85A (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 4.5V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 450mV @ 2mA (Min), Supplier Device Package: TO-220AB, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 21250 pF @ 20 V.
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SUP85N02-03-E3 | Hersteller : Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 4.5V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 450mV @ 2mA (Min) Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 21250 pF @ 20 V |
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