Technische Details SUP60N10-18P-E3 Vishay
Description: MOSFET N-CH 100V 60A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 18.3mOhm @ 15A, 10V, Power Dissipation (Max): 3.75W (Ta), 150W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 50 V.
Weitere Produktangebote SUP60N10-18P-E3
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SUP60N10-18P-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 60A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 18.3mOhm @ 15A, 10V Power Dissipation (Max): 3.75W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 50 V |
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