SUM60061EL-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: P-CHANNEL 80 V (D-S) MOSFET D2PA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 40 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 800+ | 5.65 EUR |
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Technische Details SUM60061EL-GE3 Vishay Siliconix
Description: P-CHANNEL 80 V (D-S) MOSFET D2PA, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 150A (Tc), Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 40 V.
Weitere Produktangebote SUM60061EL-GE3 nach Preis ab 5.12 EUR bis 9.36 EUR
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SUM60061EL-GE3 | Hersteller : Vishay / Siliconix |
MOSFET 80V P-CH (D-S) |
auf Bestellung 2236 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM60061EL-GE3 | Hersteller : Vishay Siliconix |
Description: P-CHANNEL 80 V (D-S) MOSFET D2PA Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 40 V |
auf Bestellung 1402 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM60061EL-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 80V 150A 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
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| SUM60061EL-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -80V; -150A; Idm: -250A Case: TO263 Kind of package: reel; tape Mounting: SMD Technology: TrenchFET® On-state resistance: 8.6mΩ Type of transistor: P-MOSFET Power dissipation: 375W Polarisation: unipolar Gate charge: 218nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -250A Drain-source voltage: -80V Drain current: -150A Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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| SUM60061EL-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -80V; -150A; Idm: -250A Case: TO263 Kind of package: reel; tape Mounting: SMD Technology: TrenchFET® On-state resistance: 8.6mΩ Type of transistor: P-MOSFET Power dissipation: 375W Polarisation: unipolar Gate charge: 218nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -250A Drain-source voltage: -80V Drain current: -150A |
Produkt ist nicht verfügbar |