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SUM110N10-09-E3 Vishay Siliconix
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Description: MOSFET N-CH 100V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 25 V
auf Bestellung 3200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
800+ | 3.72 EUR |
1600+ | 3.19 EUR |
2400+ | 3 EUR |
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Technische Details SUM110N10-09-E3 Vishay Siliconix
Description: MOSFET N-CH 100V 110A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 30A, 10V, Power Dissipation (Max): 3.75W (Ta), 375W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 25 V.
Weitere Produktangebote SUM110N10-09-E3 nach Preis ab 3.12 EUR bis 6.86 EUR
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SUM110N10-09-E3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 87A; 375W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 87A Power dissipation: 375W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: SMD Gate charge: 110nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 678 Stücke: Lieferzeit 7-14 Tag (e) |
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SUM110N10-09-E3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 87A; 375W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 87A Power dissipation: 375W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: SMD Gate charge: 110nC Kind of channel: enhanced |
auf Bestellung 678 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM110N10-09-E3 | Hersteller : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 30A, 10V Power Dissipation (Max): 3.75W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 25 V |
auf Bestellung 3638 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM110N10-09-E3 | Hersteller : Vishay / Siliconix |
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auf Bestellung 2202 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM110N10-09-E3 | Hersteller : Vishay |
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auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM110N10-09-E3 | Hersteller : Vishay |
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auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM110N10-09-E3 | Hersteller : Vishay |
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auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM110N10-09-E3 | Hersteller : Vishay |
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