SUD80460E-GE3 Vishay / Siliconix
auf Bestellung 45905 Stücke:
Lieferzeit 206-210 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 2.24 EUR |
| 10+ | 1.42 EUR |
| 100+ | 0.94 EUR |
| 500+ | 0.76 EUR |
| 1000+ | 0.69 EUR |
| 2000+ | 0.64 EUR |
| 4000+ | 0.63 EUR |
Produktrezensionen
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Technische Details SUD80460E-GE3 Vishay / Siliconix
Description: MOSFET N-CH 150V 42A TO252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 42A (Tc), Rds On (Max) @ Id, Vgs: 44.7mOhm @ 8.3A, 10V, Power Dissipation (Max): 65.2W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 50 V.
Weitere Produktangebote SUD80460E-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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SUD80460E-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 150V 42A 3-Pin(2+Tab) TO-252AA |
Produkt ist nicht verfügbar |
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SUD80460E-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 150V 42A 3-Pin(2+Tab) TO-252AA |
Produkt ist nicht verfügbar |
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| SUD80460E-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 42A; Idm: 40A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 42A Pulsed drain current: 40A Power dissipation: 65.2W Case: TO252 Gate-source voltage: ±20V On-state resistance: 44.7mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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SUD80460E-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 150V 42A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 44.7mOhm @ 8.3A, 10V Power Dissipation (Max): 65.2W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 50 V |
Produkt ist nicht verfügbar |
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SUD80460E-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 150V 42A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 44.7mOhm @ 8.3A, 10V Power Dissipation (Max): 65.2W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 50 V |
Produkt ist nicht verfügbar |
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| SUD80460E-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 42A; Idm: 40A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 42A Pulsed drain current: 40A Power dissipation: 65.2W Case: TO252 Gate-source voltage: ±20V On-state resistance: 44.7mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |