SUD35N10-26P-E3 Vishay Semiconductors
auf Bestellung 5237 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 3.41 EUR |
| 10+ | 2.85 EUR |
| 100+ | 2.27 EUR |
| 250+ | 2.09 EUR |
| 500+ | 1.9 EUR |
| 1000+ | 1.62 EUR |
| 2000+ | 1.5 EUR |
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Technische Details SUD35N10-26P-E3 Vishay Semiconductors
Description: MOSFET N-CH 100V 35A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 26mOhm @ 12A, 10V, Power Dissipation (Max): 8.3W (Ta), 83W (Tc), Vgs(th) (Max) @ Id: 4.4V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 12 V.
Weitere Produktangebote SUD35N10-26P-E3 nach Preis ab 1.63 EUR bis 3.43 EUR
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SUD35N10-26P-E3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 100V 35A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 12A, 10V Power Dissipation (Max): 8.3W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 12 V |
auf Bestellung 1713 Stücke: Lieferzeit 10-14 Tag (e) |
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SUD35N10-26P-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 35A 3-Pin(2+Tab) DPAK |
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| SUD35N10-26P-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 35A; Idm: 40A; 83W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 35A Pulsed drain current: 40A Power dissipation: 83W Case: TO252 Gate-source voltage: ±20V On-state resistance: 37.5mΩ Mounting: SMD Gate charge: 47nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2000 Stücke |
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SUD35N10-26P-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 35A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 12A, 10V Power Dissipation (Max): 8.3W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 12 V |
Produkt ist nicht verfügbar |
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| SUD35N10-26P-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 35A; Idm: 40A; 83W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 35A Pulsed drain current: 40A Power dissipation: 83W Case: TO252 Gate-source voltage: ±20V On-state resistance: 37.5mΩ Mounting: SMD Gate charge: 47nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |