SUD19P06-60-E3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 60V 18.3A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18.3A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
Power Dissipation (Max): 2.3W (Ta), 38.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2000+ | 0.77 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SUD19P06-60-E3 Vishay Siliconix
Description: MOSFET P-CH 60V 18.3A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 18.3A (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V, Power Dissipation (Max): 2.3W (Ta), 38.5W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V.
Weitere Produktangebote SUD19P06-60-E3 nach Preis ab 0.72 EUR bis 1.87 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SUD19P06-60-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 60V 18.3A 3-Pin(2+Tab) DPAK |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
SUD19P06-60-E3 | Hersteller : Vishay Semiconductors |
MOSFETs 60V 19A 38.5W |
auf Bestellung 33019 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
SUD19P06-60-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 60V 18.3A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18.3A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V Power Dissipation (Max): 2.3W (Ta), 38.5W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V |
auf Bestellung 3967 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
SUD19P06-60-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 60V 18.3A 3-Pin(2+Tab) DPAK |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
 |
SUD19P06-60-E3 Produktcode: 75848 |
Verschiedene Bauteile > Other components 3 |
Produkt ist nicht verfügbar
|
||||||||||||||||||
|
|
SUD19P06-60-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 60V 18.3A 3-Pin(2+Tab) DPAK |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
SUD19P06-60-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 60V 18.3A 3-Pin(2+Tab) DPAK |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
SUD19P06-60-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 60V 18.3A 3-Pin(2+Tab) DPAK |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
SUD19P06-60-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 60V 18.3A 3-Pin(2+Tab) DPAK |
Produkt ist nicht verfügbar |
|||||||||||||||||
 |
SUD19P06-60-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -18.3A; Idm: -30A; 38.5W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -18.3A Pulsed drain current: -30A Power dissipation: 38.5W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
SUD19P06-60-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -18.3A; Idm: -30A; 38.5W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -18.3A Pulsed drain current: -30A Power dissipation: 38.5W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |