SUD15N15-95-BE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 150V 15A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 2.7W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2000+ | 1.57 EUR |
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Technische Details SUD15N15-95-BE3 Vishay Siliconix
Description: MOSFET N-CH 150V 15A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V, Power Dissipation (Max): 2.7W (Ta), 62W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V.
Weitere Produktangebote SUD15N15-95-BE3 nach Preis ab 1.65 EUR bis 3.48 EUR
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SUD15N15-95-BE3 | Hersteller : Vishay / Siliconix |
MOSFET 150V N-CH (D-S) 175 DEG.C |
auf Bestellung 3587 Stücke: Lieferzeit 10-14 Tag (e) |
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SUD15N15-95-BE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 150V 15A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V Power Dissipation (Max): 2.7W (Ta), 62W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V |
auf Bestellung 6310 Stücke: Lieferzeit 10-14 Tag (e) |
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