SUD09P10-195-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 100V 8.8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 3.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 32.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 50 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2000+ | 0.56 EUR |
| 6000+ | 0.53 EUR |
| 10000+ | 0.51 EUR |
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Technische Details SUD09P10-195-GE3 Vishay Siliconix
Description: MOSFET P-CH 100V 8.8A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc), Rds On (Max) @ Id, Vgs: 195mOhm @ 3.6A, 10V, Power Dissipation (Max): 2.5W (Ta), 32.1W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 50 V.
Weitere Produktangebote SUD09P10-195-GE3 nach Preis ab 0.57 EUR bis 1.46 EUR
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SUD09P10-195-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 100V 8.8A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc) Rds On (Max) @ Id, Vgs: 195mOhm @ 3.6A, 10V Power Dissipation (Max): 2.5W (Ta), 32.1W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 50 V |
auf Bestellung 24758 Stücke: Lieferzeit 10-14 Tag (e) |
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SUD09P10-195-GE3 | Hersteller : Vishay Semiconductors |
MOSFET -100V 195mOhms@ 10V -8.8A |
auf Bestellung 15319 Stücke: Lieferzeit 10-14 Tag (e) |
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SUD09P10-195-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 100V 8.8A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 620 Stücke: Lieferzeit 14-21 Tag (e) |
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SUD09P10-195-GE3 | Hersteller : VISHAY |
Description: VISHAY - SUD09P10-195-GE3 - MOSFET, P-CH, -100V, -8.8A, 150DEG C tariffCode: 85412900 Transistormontage: Surface Mount Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 8.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 32.1W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: P Channel Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.162ohm directShipCharge: 25 SVHC: Lead |
auf Bestellung 1971 Stücke: Lieferzeit 14-21 Tag (e) |
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SUD09P10-195-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 100V 8.8A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SUD09P10-195-GE3 | Hersteller : VISHAY |
SUD09P10-195-GE3 SMD P channel transistors |
auf Bestellung 1994 Stücke: Lieferzeit 7-14 Tag (e) |
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SUD09P10-195-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 100V 8.8A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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SUD09P10-195-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 100V 8.8A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |